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| SEMICONDUCTOR HGTD3N60C3, HGTD3N60C3S 6A, 600V, UFS Series N-Channel IGBTs Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49113. June 1997 Features * 6A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Ordering Information PART NUMBER HGTD3N60C3 HGTD3N60C3S PACKAGE TO-251AA TO-252AA BRAND G3N60C G3N60C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in Tape and Reel, i.e. HGTD3N60C3S9A. Symbol N-CHANNEL ENHANCEMENT MODE C G E Packaging JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) GATE EMITTER COLLECTOR (FLANGE) JEDEC TO-252AA HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright (c) Harris Corporation 1997 File Number 4139.3 1 HGTD3N60C3, HGTD3N60C3S Absolute Maximum Ratings TC = 25oC HGTD3N60C3 HGTD3N60C3S Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6 . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 82. 6 3 24 20 30 18A at 480V 33 0.27 100 -40 to 150 260 8 W W/oC mJ oC oC UNITS V A A A V V 600 s Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 16 3.0 VCE(PK) = 480V VCE(PK) = 600V 18 2 TYP 30 1.65 1.85 5.5 MAX 250 2.0 2.0 2.2 6.0 250 UNITS V V A mA V V V nA A A Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 25V TJ = 150oC RG = 82 VGE = 15V L = 1mH Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VGE(TH) IGES SSOA Gate to Emitter Plateau Voltage On-State Gate Charge VGEP Qg(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V - 8.3 10.8 13.8 5 10 325 130 85 245 - 13.5 17.3 400 275 3.75 V nC nC ns ns ns ns J J oC/W Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE: td(ON)I trI td(OFF)I tfI EON EOFF RJC VGE = 20V oC TJ = 150 ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82 L = 1mH 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 2 HGTD3N60C3, HGTD3N60C3S Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V) 14 TC = 150oC TC = 25oC TC = -40oC DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 9.0V 8.5V 8.0V 7.5V 7.0V 10 10V VGE = 15V 12V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) 20 18 16 14 12 10 8 6 4 2 0 0 ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 20 18 16 14 12 10 8 6 4 2 0 0 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC TC = -40oC TC = 150oC TC = 25oC TC = 150oC 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (S) ICE , DC COLLECTOR CURRENT (A) VGE = 15V VCE = 360V, RGE = 82, TJ = 125oC 6 5 4 3 2 1 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 12 10 tSC 8 ISC 6 4 2 0 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V) 60 50 40 30 20 10 0 15 FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) 7 14 70 HGTD3N60C3, HGTD3N60C3S Typical Performance Curves 20 td(ON)I , TURN-ON DELAY TIME (ns) (Continued) 500 td(OFF)I , TURN-OFF DELAY TIME (ns) TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V 400 VGE = 10V 10 300 VGE = 15V VGE = 15V VGE = 10V 200 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 3 1 2 5 6 7 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 80 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V VGE = 10V tfI , FALL TIME (ns) 300 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V trI , TURN-ON RISE TIME (ns) 200 VGE = 10V OR 15V VGE = 15V 10 5 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 100 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 0.5 EON , TURN-ON ENERGY LOSS (mJ) EOFF , TURN-OFF ENERGY LOSS (mJ) TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V 0.8 0.7 0.6 TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V 0.4 VGE = 10V 0.3 VGE = 10V or 15V 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 0.2 VGE = 15V 0.1 0 1 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 4 HGTD3N60C3, HGTD3N60C3S Typical Performance Curves 200 fMAX , OPERATING FREQUENCY (kHz) (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 20 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, VGE = 15V, RG = 82, L = 1mH TJ = 150oC, TC = 75oC RG = 82, L = 1mH 100 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) 10 1 RJC = 3.75oC/W 2 3 VGE = 15V VGE = 10V 4 5 6 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA FREQUENCY = 1MHz CIES 400 C, CAPACITANCE (pF) 480 12 300 360 VCE = 600V VCE = 400V VCE = 200V 9 200 COES CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 240 6 100 120 3 0 0 2 4 6 8 10 Qg , GATE CHARGE (nC) 12 14 0 FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 t1 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 5 VGE, GATE TO EMITTER VOLTAGE (V) 500 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 600 IG REF = 1.060mA, RL = 200, TC = 25oC 15 HGTD3N60C3, HGTD3N60C3S Test Circuit and Waveform L = 1mH RHRD460 VGE RG = 82 + 90% 10% EOFF VCE VDD = 480V ICE 90% 10% td(OFF)I tfI trI td(ON)I EON - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc. Operating Frequency Information Operating Frequency Information for a Typical Device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 6 HGTD3N60C3, HGTD3N60C3S TO-251AA 3 LEAD JEDEC TO-251AA PLASTIC PACKAGE E H1 A A1 TERM. 4 SEATING PLANE INCHES SYMBOL A A1 b b1 b2 MIN 0.086 0.018 0.028 0.033 0.205 0.018 0.270 0.250 MAX 0.094 0.022 0.032 0.040 0.215 0.022 0.290 0.265 MILLIMETERS MIN 2.19 0.46 0.72 0.84 5.21 0.46 6.86 6.35 MAX 2.38 0.55 0.81 1.01 5.46 0.55 7.36 6.73 NOTES 3, 4 3, 4 3 3, 4 3, 4 5 5 6 2 b2 D b1 L1 L c D E b 1 2 3 c e e1 0.090 TYP 0.180 BSC 0.035 0.040 0.355 0.075 0.045 0.045 0.375 0.090 2.28 TYP 4.57 BSC 0.89 1.02 9.02 1.91 1.14 1.14 9.52 2.28 e e1 LEAD 1 LEAD 2 LEAD 3 TERM. 4 - GATE - COLLECTOR - EMITTER - COLLECTOR J1 H1 J1 L L1 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-251AA outline dated 9-88. 2. Solder finish uncontrolled in this area. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 10-95. 7 HGTD3N60C3, HGTD3N60C3S TO-252AA SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE E H1 A A1 SEATING PLANE D L2 1 3 L INCHES SYMBOL A A1 b b1 b2 b3 c D E e e1 H1 J1 L 0.265 (6.7) MILLIMETERS MIN 2.19 0.46 0.72 0.84 5.21 4.83 0.46 6.86 6.35 MAX 2.38 0.55 0.81 1.01 5.46 0.55 7.36 6.73 NOTES 4, 5 4, 5 4 4, 5 2 4, 5 7 7 4, 6 3 2 b2 MIN 0.086 0.018 0.028 0.033 0.205 0.190 0.018 0.270 0.250 MAX 0.094 0.022 0.032 0.040 0.215 0.022 0.290 0.265 b e e1 TERM. 4 b1 L1 c J1 0.265 (6.7) 0.090 TYP 0.180 BSC 0.035 0.040 0.100 0.020 0.025 0.170 0.045 0.045 0.115 0.040 - 2.28 TYP 4.57 BSC 0.89 1.02 2.54 0.51 0.64 4.32 1.14 1.14 2.92 1.01 - b3 L3 L1 L2 L3 0.070 (1.8) 0.118 (3.0) BACK VIEW 0.063 (1.6) 0.090 (2.3) 0.090 (2.3) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS LEAD 1 LEAD 3 TERM. 4 - GATE - EMITTER - COLLECTOR 0.063 (1.6) NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-252AA outline dated 9-88. 2. L3 and b3 dimensions establish a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 6 dated 10-96. 8 HGTD3N60C3, HGTD3N60C3S TO-252AA 16mm TAPE AND REEL 22.4mm 1.5mm DIA. HOLE 4.0mm 2.0mm 1.75mm C L 16mm 330mm 50mm 8.0mm 13mm 16.4mm USER DIRECTION OF FEED COVER TAPE GENERAL INFORMATION 1. USE "9A" SUFFIX ON PART NUMBER. 2. 2500 PIECES PER REEL. 3. ORDER IN MULTIPLES OF FULL REELS ONLY. 4. MEETS EIA-481 REVISION "A" SPECIFICATIONS. Revision 6 dated 10-96 All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400 SEMICONDUCTOR 9 |
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